NDLI: Reliability Studies on High-Temperature Operation of Mixed As/Sb Staggered Gap Tunnel FET Material and Devices

Content Provider	IEEE Xplore Digital Library
Author	Yan Zhu Mohata, D.K. Datta, S. Hudait, M.K.
Copyright Year	2001
Abstract	The reliability of structural and electrical properties of mixed As/Sb staggered gap tunnel field-effect transistors (TFETs) for high-temperature operation was comprehensively investigated from 25 ^°C to 150 ^°C. Temperature-dependent X-ray measurements showed identical strain relaxation of the active region, indicating that no additional dislocations were introduced at 150 ^°C. Symmetric 2-D surface crosshatch patterns before and after annealing suggested no significant structural properties change during high-temperature operation. No extra interdiffusion of species at the source/channel heterointerface was observed at 150 ^°C, confirmed by secondary ion mass spectrometry measurement. The leakage current of the fabricated reverse-biased p⁺-i-n⁺ diode exponentially increased with increasing temperature due to Shockley-Read-Hall generation-recombination mechanism. The on-state drain current of the TFET device showed weak temperature dependence, and it decreased with increasing temperature from 25 ^°C to 100 ^°C due to the variation of Fermi distribution and the increase in channel resistance but increased from 100 ^°C to 150 ^°C due to the reduction of both band-gap energy and the effective tunneling barrier height. The subthreshold slope has a strong positive temperature-dependent property particularly at higher temperature due to trap-assisted tunneling process. These experimental results demonstrated stable structural properties and distinguished device characteristics of the mixed As/Sb staggered gap TFETs at higher operating temperature. The temperature-dependent structural and device properties of the mixed As/Sb staggered gap TFET highlight the importance of the reliability on high-temperature operation of TFETs for future low-power digital logic applications.
Sponsorship	IEEE Electron Devices Society IEEE Reliability Society
Starting Page	245
Ending Page	254
Page Count	10
File Size	1408829
File Format	PDF
ISSN	15304388
Volume Number	14
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	High temperature effects Field effect transistors Staggered gap heterostructure tunnel field-effect transistor (TFET) High-temperature reliability mixed As/Sb staggered gap heterostructure
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Safety, Risk, Reliability and Quality Electrical and Electronic Engineering

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