NDLI: Comparison of Reaction-Diffusion and Atomistic Trap-Based BTI Models for Logic Gates

Content Provider	IEEE Xplore Digital Library
Author	Kukner, H. Khan, S. Weckx, P. Raghavan, P. Hamdioui, S. Kaczer, B. Catthoor, F. Van der Perre, L. Lauwereins, R. Groeseneken, G.
Copyright Year	2001
Abstract	In deeply scaled CMOS technology, time-dependent degradation mechanisms (TDDMs), such as Bias Temperature Instability (BTI), have threatened the transistor performance, hence the overall circuit/system reliability. Two well-known attempts to model BTI mechanism are the reaction-diffusion (R-D) model and the Atomistic trap-based model. This paper presents a thorough comparative analysis of the two models at the gate-level in order to explore when their predictions are the same and when not. The comparison is done by evaluating degradation trends in a set of CMOS logic gates (e.g., INV, NAND, NOR, etc.) while considering seven attributes: 1) gate type, 2) gate drive strength, 3) input frequency, 4) duty factor, 5) non-periodicity, 6) instant degradation versus long-term aging, and 7) simulation CPU time and memory usage. The simulation results show that two models are in consistency in terms of the gate degradation trends w.r.t. the first four attributes (gate type, input frequency, etc.). For the rest of the attributes, the workload-dependent solution of the Atomistic trap-based model is superior from the point of non-periodicity and instant degradation, while the R-D model gets advantageous in case of long-term aging, and simulation CPU time and memory usage due to its lite AC periodic and duty factor dependent solution.
Sponsorship	IEEE Electron Devices Society IEEE Reliability Society
Starting Page	182
Ending Page	193
Page Count	12
File Size	1064851
File Format	PDF
ISSN	15304388
Volume Number	14
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Atomistic trapping Degradation Reaction-diffusion models reliability Atomistic trap-based model BTI degradation reaction-diffusion model
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Safety, Risk, Reliability and Quality Electrical and Electronic Engineering

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