NDLI: Polarity-Controllable Silicon Nanowire Transistors With Dual Threshold Voltages

Content Provider	IEEE Xplore Digital Library
Author	Jian Zhang De Marchi, M. Sacchetto, D. Gaillardon, P.-E. Leblebici, Y. De Micheli, G.
Copyright Year	1963
Abstract	Gate-all-around (GAA) silicon nanowires enable an unprecedented electrostatic control on the semiconductor channel that can push device performance with continuous scaling. In modern electronic circuits, the control of the threshold voltage is essential for improving circuit performance and reducing static power consumption. Here, we propose a silicon nanowire transistor with three independent GAA electrodes, demonstrating, within a unique device, a dynamic configurability in terms of both polarity and threshold voltage (V_T). This silicon nanowire transistor is fabricated using a vertically stacked structure with a top-down approach. Unlike conventional threshold voltage modulation techniques, the threshold control of this device is achieved by adapting the control scheme of the potential barriers at the source and drain interfaces and in the channel. Compared to conventional dual-threshold techniques, the proposed device does not tradeoff the leakage reduction at the detriment of the ON-state current, but only through a later turn-ON coming from a higher V_T. This property offers leakage control at a reduction of loss in performance. The measured characteristic demonstrates a threshold voltage difference of ~0.5 V between low-V_T and high-V_T configurations, while high-V_T configuration reduces the leakage current by two orders of magnitude as compared to low-V_T configuration.
Sponsorship	IEEE Electron Devices Society
Starting Page	3654
Ending Page	3660
Page Count	7
File Size	2236943
File Format	PDF
ISSN	00189383
Volume Number	61
Issue Number	11
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Logic gates Schottky barriers Silicon Threshold voltage Performance evaluation Tunneling Inverters threshold voltage Polarity Schottky barrier silicon nanowire
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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