NDLI: Quantitative Analysis of the Effect of Hydrogen Diffusion from Silicon Oxide Etch-Stopper Layer into Amorphous In–Ga–Zn

Content Provider	IEEE Xplore Digital Library
Author	Toda, T. Deapeng Wang Jingxin Jiang Mai Phi Hung Furuta, M.
Copyright Year	1963
Abstract	To investigate the effect of hydrogen diffusion from the silicon oxide etch-stopper (SiO_x ES) layer into the amorphous In-Ga-Zn-O (a-IGZO) on thin-film transistor (TFT) properties and stabilities, we fabricated a-IGZO TFTs with a SiO_x ES layer deposited by plasma-enhanced chemical vapor deposition at various silane (SiH₄) partial pressures (P[SiH₄]). Then, quantitative analysis was performed to investigate the relationship between the hydrogen content of the a-IGZO and electrical properties and stability of the TFTs. We found that a low resistance region was formed at the backchannel of the TFT, when the SiOx ES layer was deposited at higher P[SiH₄], leading to a drastic negative threshold voltage (Vth) shift. In addition, it was also found that at the frontchannel, the increase in the carrier concentration of a-IGZO was proportional to the increase in the amount of hydrogen in a-IGZO. On the other hand, when P[SiH₄] was increased, the subthreshold swing, hysteresis, and gate-bias stability of the TFT improved. The results indicate that hydrogen diffused from the SiO_x ES layer passivates the electron traps at the a-IGZO and/or gate insulator/a-IGZO interface, and almost all of the hydrogen also acts as shallow-donor in a-IGZO.
Sponsorship	IEEE Electron Devices Society
Starting Page	3762
Ending Page	3767
Page Count	6
File Size	1168595
File Format	PDF
ISSN	00189383
Volume Number	61
Issue Number	11
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Hydrogen Thin film transistors Logic gates Stability analysis Stress Annealing thin-film transistor (TFT). Amorphous In–Ga–Zn–O (a-IGZO) etch-stopper (ES) hydrogen diffusion silane (SiH₄) partial pressure silicon oxide (SiOx) thin-film transistor (TFT) silane (SiH4) partial pressure
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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