NDLI: Analysis of the Thickness Effect of Undoped Electron-Blocking Layer in Ultraviolet LEDs

Content Provider	IEEE Xplore Digital Library
Author	Wen-Yu Lin Tzu-Yu Wang Jia-Hao Liang Sin-Liang Ou Dong-Sing Wuu
Copyright Year	1963
Abstract	In this paper, the thickness effect of an undoped Al_0.23Ga_0.77N inserted in the Mg-doped Al_0.23Ga_0.77N electron-blocking layer (EBL) on the characteristics of the ultraviolet light-emitting diodes (UV-LEDs) was analyzed. The results of secondary-ion-mass spectrometry clearly show that the concentration of Mg back-diffusion from the p-GaN and the Mg-doped EBL decreases with the thickness of an undoped EBL. The radiative recombination rate in the multiple quantum wells (MQWs) can be obviously enhanced after inserting an undoped EBL from the simulated results, and the sample with a 6-nm-thick undoped EBL has the highest radiative recombination rate. It is worth noticing that the hole carrier concentration in the MQWs increases with increasing the thickness of an undoped EBL. The UV-LED possesses 400% enhancement in the output power (at 20 mA) by inserting a 6-nm-thick undoped EBL. The significant enhancement is ascribed to the decrease of nonradiative recombination defects formed by Mg atoms and the increase of hole concentration in the MQWs.
Sponsorship	IEEE Electron Devices Society
Starting Page	3790
Ending Page	3795
Page Count	6
File Size	1061951
File Format	PDF
ISSN	00189383
Volume Number	61
Issue Number	11
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Quantum well devices Charge carrier processes Light emitting diodes Radiative recombination Power generation Aluminum gallium nitride Gallium nitride ultraviolet (UV) Electron-blocking layer (EBL) light-emitting diode (LED) Mg diffusion simulation
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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