NDLI: Performance Modeling of Bandgap Engineered HgCdTe-Based <italic>n</italic>B<italic>n</italic> Infrared Detectors

Content Provider	IEEE Xplore Digital Library
Author	Akhavan, N.D. Jolley, G. Umana-Membreno, G.A. Antoszewski, J. Faraone, L.
Copyright Year	1963
Abstract	In this paper, we present a theoretical study of a band engineered detector design, which significantly improves the performance of mercury cadmium telluride (HgCdTe)-based unipolar n-type/barrier/n-type (nBn) infrared (IR) detectors for the midwave IR and longwave IR spectral bands. This band engineered nBn detector is based on the assumption that the valence band offset, which is normally present between the barrier and n-type absorber layer, can be eliminated using a bandgap engineering approach. The valence offset is the key issue that currently limits the performance of HgCdTe-based nBn detectors. Eliminating the valence band offset allows the nBn detectors to operate at \|V_Bias\| <; 50 mV, thus rendering insignificant all tunneling-related dark current components and allowing the detector to achieve the maximum possible diffusion current limited performance. The developed model allows the device performance to be optimized by an appropriate design of the conduction band barrier to block the flow of majority carrier electrons, while allowing minority carrier holes photogenerated in the absorber layer to reach the contact layer unimpeded. Furthermore, because of the absence of tunneling-related dark currents, it is shown that band engineered nBn detector architecture exhibits a better performance at maximum allowed absorber layer doping density compared with conventional nBn detector.
Sponsorship	IEEE Electron Devices Society
Starting Page	3691
Ending Page	3698
Page Count	8
File Size	1495032
File Format	PDF
ISSN	00189383
Volume Number	61
Issue Number	11
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Detectors Dark current Photonic band gap Performance evaluation Doping Noise Numerical models unipolar barrier detector Device simulation mercury cadmium telluride (HgCdTe) n-type/barrier/n-type (nBn) infrared (IR) detector n-type/barrier/n-type ( $n$ B $n$ ) infrared (IR) detector
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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