NDLI: Computational Study on the Performance of Multiple-Gate Nanowire Schottky-Barrier MOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Mincheol Shin
Copyright Year	1963
Abstract	Quantum simulations of multiple-gate nanowire Schottky-barrier (SB) MOSFETs in the ballistic transport regime have been performed by self-consistently solving the nonequilibrium Green's function transport equation and the Poisson's equation. The device characteristics have been examined as the channel length of the nanowire SB-MOSFETs was aggressively reduced, and their scaling behaviors were compared to planar SB devices and also to devices with doped source/drain. The enhancement of the device performance due to the multiple-gate effects has been assessed quantitatively. A limited improvement of the off-state performance has been observed, whereas ON-state currents increase significantly despite the size quantization effect.
Sponsorship	IEEE Electron Devices Society
Starting Page	737
Ending Page	742
Page Count	6
File Size	231842
File Format	PDF
ISSN	00189383
Volume Number	55
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-03-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Logic gates MOSFETs Nanoscale devices Silicon Tunneling Mathematical model Metals semiconductor device modeling Multiple gates nanowire transistors Schottky-barrier (SB) MOSFETs
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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