NDLI: Analysis of Harmonic Distortion in UDG-MOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Dutta, A. Koley, K. Saha, S.K. Sarkar, C.K.
Copyright Year	1963
Abstract	In this paper, the harmonic distortion (HD) in the underlap double-gate MOSFETs (UDG-MOSFETs) with high- k spacers is analyzed. The HD occurs due to the nonlinearity in the device performance and therefore, a detailed analysis of the HD as a function of spacer dielectric constant (k) is critical to ensure device reliability for RF performance. In this paper, the analysis is performed for the primary components, the second-order distortion (HD2), and the third-order distortion (HD3) along with the total HD. The parameters analyzed for the HD study of the UDG-MOSFETs with high- k spacers are the drain current, the transconductance, and the transconductance generation factor. The results of the analysis suggest a reduction in the distortion phenomenon for the high- k spacer devices, thereby ensuring reliability of these devices for RF applications. Also, a detailed analysis of HD2 and HD3 as a function of k of the high- k spacers are performed using UDG-MOSFETs in cascode and differential amplifier circuits.
Sponsorship	IEEE Electron Devices Society
Starting Page	998
Ending Page	1005
Page Count	8
File Size	3229771
File Format	PDF
ISSN	00189383
Volume Number	61
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	High K dielectric materials High definition video Logic gates Performance evaluation Radio frequency Dielectric constant Scattering symmetric underlap DG FET Harmonic distortion (HD) high-$k$ linearity spacer
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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