NDLI: Memristor: Part II–DC, Transient, and RF Analysis

Content Provider	IEEE Xplore Digital Library
Author	Mazady, A. Anwar, M.
Copyright Year	1963
Abstract	The dc and RF circuit performance of memristor circuits, including transient behavior, is developed by considering current contributions arising from different conduction mechanisms, namely, filament-assisted and bulk tunneling currents and currents flowing through low and high conductivity filaments. The dc circuit model explains the observed I-V hysteresis and most importantly allows scaling and optimization. A transient circuit model of memristive system is developed, based upon the dynamics, incorporating underlying electrochemistry that suggests SET and RESET transitions for a 50-nm TiO2-based memristor take approximately 120 ps to stabilize. A faster READ/WRITE operation would require appropriate conditioning circuitry. RF analysis suggests for a maximum allowable frequency of 7.5 GHz beyond which memristors can no longer be used as RRAM. These values can be pushed to higher limits by increasing the device cross-sectional area or choosing lower permittivity materials. The developed model allows its incorporation in commercial circuit simulators. The derived model is validated by incorporating it in Chua's chaotic circuit.
Sponsorship	IEEE Electron Devices Society
Starting Page	1062
Ending Page	1070
Page Count	9
File Size	1280325
File Format	PDF
ISSN	00189383
Volume Number	61
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Memristors Integrated circuit modeling Mathematical model Tunneling Conductivity Transient analysis Equations transient Dynamics high frequency response memristor RF
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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