NDLI: Heat Dissipation in Resistive Switching Devices: Comparison of Thermal Simulations and Experimental Results

Content Provider	IEEE Xplore Digital Library
Author	Yalon, E. Riess, I. Ritter, D.
Copyright Year	1963
Abstract	The local temperature plays a key role in resistive switching devices. We have previously presented a method to experimentally evaluate the filament temperature using metal-insulator-semiconductor bipolar transistor structure. In light of the experimental results, we discuss here the various possible heat dissipation mechanisms, and compare thermal simulations with the measured temperatures. Since the applied bias dropped across a tunneling gap, heat dissipation occurs at the interfaces. The simulations are consistent with our experimental data for a filament tip diameter of ~ 1 nm. A temperature-dependent thermal resistance of the interfaces and/or bulk was introduced to obtain a fit between the simulations and measured data. Thermal resistances imposed by interfaces dominated bulk material heat transport in the simulations.
Sponsorship	IEEE Electron Devices Society
Starting Page	1137
Ending Page	1144
Page Count	8
File Size	2372969
File Format	PDF
ISSN	00189383
Volume Number	61
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Heating Tunneling Temperature measurement Anodes Thermal conductivity Thermal resistance tunneling Bipolar transistor (BT) conductive filaments Joule heating resistive random access memory (RRAM) resistive switching thermal boundary resistance
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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