NDLI: Competing Degradation Mechanisms in Short-Channel Transistors Under Channel Hot-Carrier Stress at Elevated Temperatures

Content Provider	IEEE Xplore Digital Library
Author	Amat, E. Kauerauf, T. Degraeve, R. Rodriguez, R. Nafria, M. Aymerich, X. Groeseneken, G.
Copyright Year	2001
Abstract	The temperature dependence of channel hot-carrier (CHC) degradation in n-MOS transistors with high-k dielectrics has been studied. The analysis starts from the most damaging CHC stress conditions at room temperature (V _G = V _D/2 for long channels and V _G = V _D for short channels). We find that, for long-channel transistors, the CHC degradation decreases at high temperature, while for short-channel transistors, an increase is observed. In this paper, a new picture to explain the observed increment of CHC damage with temperature for short-channel transistors with high-k dielectric is presented. We demonstrate that the total CHC degradation consists of two components: the classical CHC damage located at the drain side and the degradation produced by the voltage drop over the gate dielectric, which can be considered a positive bias temperature instability (PBTI) effect. Particularly for short transistors stressed at high temperatures, this PBTI component dominates the total CHC degradation.
Sponsorship	IEEE Electron Devices Society IEEE Reliability Society
Starting Page	454
Ending Page	458
Page Count	5
File Size	269169
File Format	PDF
ISSN	15304388
Volume Number	9
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-09-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Degradation Hot carriers Stress MOSFETs Temperature dependence High-K gate dielectrics Voltage Chemicals Dielectric breakdown reliability Charge pumping (CP) high-$k$ dielectrics high temperature hot carriers
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Safety, Risk, Reliability and Quality Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Channel Hot-Carrier degradation in short channel devices with high-k/metal gate stacks

PBTI-Associated High-Temperature Hot Carrier Degradation of nMOSFETs With Metal-Gate/High- $k$ Dielectrics

New insights into the wide ID range channel hot-carrier degradation in high-k based devices

Hot carrier reliability of HfSiON PMOSFETs with TiN gate

Hot carrier stress study in Hf-silicate NMOS transistors

Localized transient charging and it's implication on the hot carrier reliability of HfSiON MOSFETs

Channel Hot-Carrier Degradation in Short-Channel Transistors With High- $k$/Metal Gate Stacks

Channel Hot-Carrier degradation under static stress in short channel transistors with high-k/metal gate stacks

Gate Voltage Influence on the Channel Hot-Carrier Degradation of High-$k$ -Based Devices

Competing Degradation Mechanisms in Short-Channel Transistors Under Channel Hot-Carrier Stress at Elevated Temperatures

Similar Documents

Channel Hot-Carrier degradation in short channel devices with high-k/metal gate stacks

PBTI-Associated High-Temperature Hot Carrier Degradation of nMOSFETs With Metal-Gate/High- $k$ Dielectrics

New insights into the wide ID range channel hot-carrier degradation in high-k based devices

Hot carrier reliability of HfSiON PMOSFETs with TiN gate

Hot carrier stress study in Hf-silicate NMOS transistors

Localized transient charging and it's implication on the hot carrier reliability of HfSiON MOSFETs

Channel Hot-Carrier Degradation in Short-Channel Transistors With High- $k$/Metal Gate Stacks

Channel Hot-Carrier degradation under static stress in short channel transistors with high-k/metal gate stacks

Gate Voltage Influence on the Channel Hot-Carrier Degradation of High-$k$ -Based Devices

Competing Degradation Mechanisms in Short-Channel Transistors Under Channel Hot-Carrier Stress at Elevated Temperatures