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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Jae Kyu Choi Mitin, V. Ramaswamy, R. Pogrebnyak, V.A. Pakmehr, M.P. Muravjov, A. Shur, M.S. Gill, J. Mehdi, I. Karasik, B.S. Sergeev, A.V. |
| Copyright Year | 2001 |
| Abstract | We present the results on design, fabrication, and characterization of a hot-electron bolometer based on low-mobility 2-D electron gas (2-DEG) in an AlGaN/GaN heterostructure. The characterization of our hot-electron bolometers demonstrates that the following can be achieved simultaneously: 1) strong coupling to incident THz radiation due to strong Drude absorption; 2) significant THz heating of 2-DEG due to the small value of the electron heat capacity; and 3) high responsivity due to the strong temperature dependence of 2-DEG resistance. Low contact resistance achieved in our devices ensures that THz radiation couples primarily to the 2-DEG. Due to a small electron momentum relaxation time, the real part of the 2-DEG sensor impedance is ~50-100 Ω, which provides good impedance matching between sensors and antennas. The room temperature responsivity of our devices reaches ~0.04 A/W at 2.55 THz along with a noise equivalent power of ~5 nW/Hz1/2. |
| Sponsorship | IEEE Sensors Council |
| Starting Page | 80 |
| Ending Page | 88 |
| Page Count | 9 |
| File Size | 1045637 |
| File Format | |
| ISSN | 1530437X |
| Volume Number | 13 |
| Issue Number | 1 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2013-01-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | MODFETs HEMTs Antennas Couplings Gallium nitride Bolometers Detectors THz hot electron bolometer 2-D electron gas (2-DEG) AlGaN/GaN heterostructure |
| Content Type | Text |
| Resource Type | Article |
| Subject | Instrumentation Electrical and Electronic Engineering |
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