NDLI: <formula formulatype=inline><tex Notation=TeX>${rm NO}_{2}$</tex></formula> Detection With AlGaN/GaN 2DEG Channels for Air Quality Monitoring

Content Provider	IEEE Xplore Digital Library
Author	Offermans, P. Vitushinsky, R.
Copyright Year	2001
Abstract	Low-ppb room temperature NO₂ detection is demonstrated using recessed AlGaN/GaN heterostructures fabricated on silicon substrates. We employ the 2-D electron gas (2DEG) formed at the interface of the AlGaN/GaN heterostructure for the monitoring of low-ppb NO₂ concentrations. The dynamic range of these 2DEG structures can be tuned to that of interest for air quality monitoring (0-100 ppb) by recessing of the open gate areas. We find that in the presence of humidity, the interaction of NO₂ with the open gate area reversibly changes 2DEG conductivity. A slope-based detection scheme in combination with periodic heating-induced gas desorption enables continuous air quality (NO₂) monitoring.
Sponsorship	IEEE Sensors Council
Starting Page	2823
Ending Page	2827
Page Count	5
File Size	952390
File Format	PDF
ISSN	1530437X
Volume Number	13
Issue Number	8
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-08-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MODFETs HEMTs Gallium nitride Humidity Aluminum gallium nitride Heat recovery nitrogen dioxide 2-D electron gas aluminum gallium nitride gas detectors
Content Type	Text
Resource Type	Article
Subject	Instrumentation Electrical and Electronic Engineering

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${rm NO}_{2}$ Detection With AlGaN/GaN 2DEG Channels for Air Quality Monitoring