NDLI: Development of Si IGBT Phase-Leg Modules for Operation at 200 °C in Hybrid Electric Vehicle Applications

Content Provider	IEEE Xplore Digital Library
Author	Zhuxian Xu Dong Jiang Ming Li Puqi Ning Fei Wang Zhenxian Liang
Copyright Year	1986
Abstract	A Si insulated-gate bipolar transistor (IGBT) phase-leg module is developed for operating at 200°C in hybrid electric vehicle applications utilizing the high temperature packaging technologies and appropriate thermal management. The static and switching electrical characteristics of the fabricated power module are tested at various temperatures, showing that the module can operate reliably with increased but acceptable losses at 200°C. The criterion on thermal performance is given to prevent thermal runaway caused by fast increase of the leakage current during a high temperature operation. Afterward, the thermal management system is designed to meet the criterion, the performance of which is evaluated with experiment. Furthermore, two temperature-sensitive electrical parameters, on-state voltage drop and the switching time, are employed for thermal impedance characterization and the junction temperature measurement during converter operation, respectively. Finally, a 10-kW buck converter prototype composed of the module assembly is built and operated at the junction temperature up to 200°C. The experimental results demonstrate the feasibility of operating Si device-based converters continuously at 200°C.
Sponsorship	IEEE Power Electronics Society
Starting Page	5557
Ending Page	5567
Page Count	11
File Size	1370742
File Format	PDF
ISSN	08858993
Volume Number	28
Issue Number	12
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature measurement Silicon Multichip modules Junctions Insulated gate bipolar transistors Temperature sensors Leakage current 200 °C High temperature packaging hybrid electric vehicle (HEV) power module Si insulated-gate bipolar transistor (IGBT)
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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