NDLI: Investigation of Si IGBT Operation at 200<formula formulatype=inline><tex Notation=TeX>$,{}^circ$</tex> </formula>C for Traction Applications

Content Provider	IEEE Xplore Digital Library
Author	Zhuxian Xu Ming Li Fei Wang Zhenxian Liang
Copyright Year	1986
Abstract	In order to satisfy the high-density requirement and harsh thermal conditions while reducing cost in future electric and hybrid electric vehicles (HEV), a systematic study of a 1200-V trench-gate field-stop Si insulated gate bipolar transistor (IGBT) operating up to 200°C is performed to determine its feasibility, issues, and application guideline. The device forward conduction characteristics, leakage current, and switching performance are evaluated at various temperatures. Based on the device characterization, the impact of the increased junction temperature on a traction drive converter loss and thermal management is analyzed. It is shown that by extending the device junction temperature to 200°C, the additional 65°C coolant loop can be eliminated without compromising power density and thermal management design. Furthermore, the possible failure mechanisms including latching, short circuit fault, and avalanche capability are tested at elevated temperatures. The criteria considering thermal stability, thermal management, short circuit capability, and avalanche capability are given at 200°C to ensure the safe and reliable operation of Si IGBTs.
Sponsorship	IEEE Power Electronics Society
Starting Page	2604
Ending Page	2615
Page Count	12
File Size	1422613
File Format	PDF
ISSN	08858993
Volume Number	28
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Insulated gate bipolar transistors Temperature Switches Silicon Junctions Leakage current Thermal stability trench-gate field-stop silicon insulated gate bipolar transistor (IGBT) High-temperature characteristics safe operating area traction application
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Development of Si IGBT Phase-Leg Modules for Operation at 200 °C in Hybrid Electric Vehicle Applications

Small-sized silicon-on-insulator lateral insulated gate bipolar transistor for larger forward bias safe operating area and lower turnoff energy

Analytical Modeling of IGBTs: Challenges and Solutions

Clustered Insulated Gate Bipolar Transistor in the Super Junction Concept: The SJ-TCIGBT

Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors

Comparison of Static and Switching Characteristics of 1200 V 4H-SiC BJT and 1200 V Si-IGBT

Physics-based insulated-gate bipolar transistor model with input capacitance correction

Adjustable high-speed insulated gate bipolar transistor

IGBT Junction Temperature Measurement via Peak Gate Current

Investigation of Si IGBT Operation at 200$,{}^circ$ C for Traction Applications

Similar Documents

Development of Si IGBT Phase-Leg Modules for Operation at 200 °C in Hybrid Electric Vehicle Applications

Small-sized silicon-on-insulator lateral insulated gate bipolar transistor for larger forward bias safe operating area and lower turnoff energy

Analytical Modeling of IGBTs: Challenges and Solutions

Clustered Insulated Gate Bipolar Transistor in the Super Junction Concept: The SJ-TCIGBT

Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors

Comparison of Static and Switching Characteristics of 1200 V 4H-SiC BJT and 1200 V Si-IGBT

Physics-based insulated-gate bipolar transistor model with input capacitance correction

Adjustable high-speed insulated gate bipolar transistor

IGBT Junction Temperature Measurement via Peak Gate Current

Investigation of Si IGBT Operation at 200$,{}^circ$ C for Traction Applications