NDLI: Small-Signal Capacitance and Current Parameter Modeling in Large-Scale High-Frequency Graphene Field-Effect Transistors

Content Provider	IEEE Xplore Digital Library
Author	Zebrev, G.I. Tselykovskiy, A.A. Batmanova, D.K. Melnik, E.V.
Copyright Year	1963
Abstract	An analytical model of the small-signal current and capacitance characteristics of radio frequency graphene field-effect transistors (GFETs) is presented. The model is based on explicit distributions of chemical potential in graphene channels (including ambipolar conductivity at high source-drain bias) obtained in the framework of drift-diffusion current continuity equation solution. Small-signal transconductance and output conductance characteristics are modeled by considering the two modes of drain current saturation, including drift velocity saturation or electrostatic pinchoff. Analytical closed expression for the complex current gain and the cutoff frequency of high-frequency GFETs are obtained. This model allows to describe an impact of parasitic resistances, capacitances, interface traps on extrinsic current gain, and cutoff frequency.
Sponsorship	IEEE Electron Devices Society
Starting Page	1799
Ending Page	1806
Page Count	8
File Size	837751
File Format	PDF
ISSN	00189383
Volume Number	60
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Capacitance Logic gates Mathematical model Graphene Transconductance Cutoff frequency Equations transconductance graphene field-effect transistors high frequency interface traps modeling parasitic capacitance quantum capacitance small-signal model
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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