NDLI: A Three-Axis CMOS-MEMS Accelerometer Structure With Vertically Integrated Fully Differential Sensing Electrodes

Content Provider	IEEE Xplore Digital Library
Author	Ming-Han Tsai Yu-Chia Liu Weileun Fang
Copyright Year	1992
Abstract	This study presents a novel CMOS-microelectromechanical systems (MEMS) three-axis accelerometer design using Taiwan Semiconductor Manufacturing Company 0.18-μm one-poly-Si six-metal/dielectric CMOS process. The multilayer metal and dielectric stacking features of the CMOS process were exploited to vertically integrate the in-plane and out-of-plane capacitive sensing electrodes. Thus, the three-axis sensing electrodes can be integrated on a single proof mass to reduce the footprint of the accelerometer. Moreover, the fully differential gap-closing sensing electrodes among all three axes are implemented to increase the sensitivities and decrease the noise. The in-plane and out-of-plane sensing gaps are respectively defined by the minimum metal line width and the thickness of one metal layer by means of the metal wet-etching post-CMOS process. Thus, the capacitive sensitivities are further improved. The fully differential gap-closing sensing electrodes also bring the advantage of reduced cross talks between all three axes. As a result, the footprint of the presented three-axis accelerometer structure is only 400 × 400 μm². Compared with existing commercial or CMOS-MEMS studies, the size is significantly reduced. The measured sensitivities (nonlinearities) are 14.7 mV/G (3.2%) for the X-axis, 15.4 mV/G (1.4%) for the Y-axis, and 14.6 mV/G (2.8%) for the Z-axis.
Sponsorship	IEEE Electron Devices Society American Society of Mechanical Engineering (ASME)
Starting Page	1329
Ending Page	1337
Page Count	9
File Size	1499945
File Format	PDF
ISSN	10577157
Volume Number	21
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Sensors Electrodes Accelerometers Metals Capacitance Acceleration CMOS process post-CMOS process Accelerometer CMOS microelectromechanical systems (MEMS) cross talks fully differential
Content Type	Text
Resource Type	Article
Subject	Mechanical Engineering Electrical and Electronic Engineering

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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