NDLI: A Three-Dimensional Physical Model for <formula formulatype=inline><tex Notation=TeX>$V_{rm th}$ </tex></formula> Variations Considering the Combined Effect of NBTI and RDF

Content Provider	IEEE Xplore Digital Library
Author	Panagopoulos, G.D. Roy, K.
Copyright Year	1963
Abstract	Aggressive transistor scaling affects the threshold voltage V_th in two ways: space and time. Transistors on the same die can have different V_th due to random dopant fluctuations (RDFs). On the other hand, V_th of a specific transistor can randomly shift in time due to random position of dangling bonds and random motion of atomic H or H₂ molecules in the oxide [negative bias temperature instability (NBTI)]. These two random effects are not totally independent because the dissociation rate of Si-H bonds at the silicon-oxide interface depends on the nonuniform electric field. In this paper, we describe the combined effect of RDF and NBTI on V_th using stochastic differential equation. In this paper, we are able to examine the effect of RDF on critical NBTI parameters such as k_f, k_r, and temperature and the correlation among these parameters. The efficacy of the proposed model is evaluated by performing Monte Carlo simulations on various transistors under different direct-current stress and obtained distributions for N_IT and V_th.
Sponsorship	IEEE Electron Devices Society
Starting Page	2337
Ending Page	2346
Page Count	10
File Size	1504797
File Format	PDF
ISSN	00189383
Volume Number	58
Issue Number	8
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-08-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Mathematical model Transistors Equations Semiconductor process modeling Resource description framework Stochastic processes Solid modeling threshold voltage variations Aging negative bias temperature instability (NBTI) random dopant fluctuations (RDFs) stochastic differential equation (SDE) temporal degradation three dimensional (3-D) physical model
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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