NDLI: Statistical Model for MOSFET Bias Temperature Instability Component Due to Charge Trapping

Content Provider	IEEE Xplore Digital Library
Author	Wirth, G.I. da Silva, R. Kaczer, B.
Copyright Year	1963
Abstract	Bias temperature instability (BTI) is a serious reliability concern for MOS transistors. This paper covers theoretical analysis, Monte Carlo simulation, and experimental investigation of the charge trapping component of BTI. An analytical model for both stress and recovery phases of BTI is presented. Furthermore, the model properly describes device behavior under periodic switching, also called AC-BTI or cyclostationary operation. The model is based on microscopic device physics parameters, which are shown to cause statistical variation in transistor BTI behavior. It is shown that a universal logarithmic law describes the time dependence of charge trapping in both stress and recovery phases, and that the time dependence may be separated from the temperature and bias point dependence. Analytical equations for the statistical parameters are provided. The model is compared with experimental data and Monte Carlo simulation results.
Sponsorship	IEEE Electron Devices Society
Starting Page	2743
Ending Page	2751
Page Count	9
File Size	516108
File Format	PDF
ISSN	00189383
Volume Number	58
Issue Number	8
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-08-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Stress Mathematical model Charge carrier processes Threshold voltage Equations Temperature measurement Monte Carlo methods random telegraph signal (RTS) Bias temperature instability (BTI) charge trapping performance degradation (aging)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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