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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Magnone, P. Crupi, F. Wils, N. Jain, R. Tuinhout, H. Andricciola, P. Giusi, G. Fiegna, C. |
| Copyright Year | 1963 |
| Abstract | This paper examines the impact of hot carriers (HCs) on n-channel metal-oxide-semiconductor (MOS) field-effect transistor mismatch across the 45- and 65-nm complementary MOS technology generations. The reported statistical analysis is based on a large overall sample population of about 1000 transistors. HC stress introduces a source of variability in device electrical parameters due to the randomly generated charge traps in the gate dielectric or at the substrate/dielectric interface. The evolution of the threshold-voltage mismatch during an HC stress is well modeled by assuming a Poisson distribution of the induced charge traps with a nonuniform generation along the channel. Once the evolution of the HC-induced VT shift is known, a single parameter is able to accurately describe the evolution of the HC-induced VT variability. This parameter is independent of the stress time and stress bias voltage. The HC stress causes a significantly larger degradation in the subthreshold slope variability, compared to threshold voltage variability for both investigated technology nodes. |
| Sponsorship | IEEE Electron Devices Society |
| Starting Page | 2347 |
| Ending Page | 2353 |
| Page Count | 7 |
| File Size | 474099 |
| File Format | |
| ISSN | 00189383 |
| Volume Number | 58 |
| Issue Number | 8 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2011-08-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Stress Logic gates Semiconductor device modeling CMOS integrated circuits CMOS technology MOSFET circuits Transistors variability Hot carrier (HC) mismatch metal–oxide–semiconductor field-effect transistor (MOSFET) subthreshold slope threshold voltage |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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