NDLI: InP DHBT-Based IC Technology for 100-Gb/s Ethernet

Content Provider	IEEE Xplore Digital Library
Author	Driad, R. Rosenzweig, J. Makon, R.E. Losch, R. Hurm, V. Walcher, H. Schlechtweg, M.
Copyright Year	1963
Abstract	It is now clear that 112-Gb/s data rate is the next step in the network evolution (100-Gb/s Ethernet). Due to its high speed and high breakdown voltage, the InP double-heterojunction bipolar transistor (DHBT) technology is particularly suited for signal processing and high-speed communication systems. This paper summarizes our InP DHBT device and integrated circuit (IC) technology developed for >; 100-Gb/s-class medium scale mixed-signal ICs. Key features and issues important for the growth and manufacturing of InP DHBTs with step-graded collectors are first discussed. The molecular-beam-epitaxy-grown transistors have cut-off frequencies (f_T and f_max) of over 350 GHz, current gains of ~90, and common-emitter breakdown voltages of >; 4.5 V. Using this technology, we then fabricated and succeeded in 112-Gb/s testing of multiplexers and integrated clock and data recovery/1:2 demultiplexer ICs and modules with very clear eye waveforms. Using the same technology, a distributed amplifier intended for use as a modulator driver exhibited an output voltage swing of ~2 V_pp. These building-block ICs combine high-speed operation with high signal quality and enable 112-Gb/s optical fiber transmission.
Sponsorship	IEEE Electron Devices Society
Starting Page	2604
Ending Page	2609
Page Count	6
File Size	952233
File Format	PDF
ISSN	00189383
Volume Number	58
Issue Number	8
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-08-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indium phosphide DH-HEMTs Integrated circuits Indium gallium arsenide Clocks Fabrication Gain mixed analog/digital ICs Double-heterojunction bipolar transistors (DHBTs) InP integrated circuit (IC) technology
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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A 165-Gb/s 4:1 Multiplexer in InP DHBT Technology

DC-100-GHz frequency doublers in InP DHBT technology

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Improved External Base Resistance Extraction for Submicrometer InP/InGaAs DHBT Models

Direct digital synthesizer with ROM-Less architecture at 13-GHz clock frequency in InP DHBT technology

InGaAs/InP DHBT technology and design methodology for over 40 Gb/s optical communication circuits

10-GHz power performance of a type II InP/GaAsSb DHBT

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InP DHBT-Based IC Technology for 100-Gb/s Ethernet

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