NDLI: Performance Improvement of <formula formulatype=inline><tex Notation=TeX>$hbox{Sm}_{2}hbox{O}_{3}$ </tex></formula> MIM Capacitors by Using Plasma Treatment After Dielectric Formation

Content Provider	IEEE Xplore Digital Library
Author	Jian-Jun Yang Jing-De Chen Wise, R. Steinmann, P. Yee-Chia Yeo Chunxiang Zhu
Copyright Year	1980
Abstract	In this letter, we investigate the dependence of the performance of metal-insulator-metal (MIM) capacitors with Sm₂O₃ dielectric on plasma treatment (PT) performed before Sm₂O₃ deposition, after Sm₂O₃ deposition, or both before and after Sm₂O₃ deposition. By performing PT in N₂ ambient (PTN) after Sm₂O₃ dielectric formation, the effective quadratic voltage coefficient of capacitance (VCC) can be reduced from 498 to 234 ppm/V² and the effective linear VCC can be reduced from 742.3 to 172 ppm/V for MIM capacitor with Sm₂O₃ dielectric having a capacitance density of ~ 7.5 fF/mum². The leakage current density at +3.3 V can be reduced from 3.44 10^-7 to 1.60 times 10^-8 A/cm² by performing PTN in both before and after Sm₂O₃ deposition. PTN after dielectric formation is an effective way to improve the performance of high-kappa dielectric MIM capacitors for RF and analog/mixed signal IC applications.
Sponsorship	IEEE Electron Devices Society
Starting Page	1033
Ending Page	1035
Page Count	3
File Size	301063
File Format	PDF
ISSN	07413106
Volume Number	30
Issue Number	10
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-10-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Dielectrics MIM capacitors Capacitance Metal-insulator structures Plasmas Voltage Leakage current Radio frequency RF signals Analog integrated circuits voltage coefficient of capacitance (VCC) Capacitor linear metal–insulator–metal (MIM) plasma treatment (PT) quadratic $\hbox{Sm}_{2}\hbox{O}_{3}$
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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