NDLI: Capacitance Analysis of Highly Leaky <formula formulatype=inline><tex Notation=TeX>$hbox{Al}_{2} hbox{O}_{3}$</tex></formula> MIM Capacitors Using Time Domain Reflectometry

Content Provider	IEEE Xplore Digital Library
Author	Yonghun Kim Young Gon Lee Minwoo Kim Chang Goo Kang Ukjin Jung Jin Ju Kim Seung Chul Song Blatchford, J. Kirkpatrick, B. Niimi, H. Kwan Yong Lim Byoung Hun Lee
Copyright Year	1980
Abstract	Characterization of metal-insulator-metal (MIM) capacitors with a scaled dielectric is a challenge using conventional capacitance-voltage (C-V) measurements due to a high leakage current. In this letter, a method to analyze MIM capacitance that is more immune to the leakage current problem has been successfully demonstrated using time domain reflectometry (TDR). The TDR method can be applied to Al₂O₃ MIM capacitors with a capacitance density up to ~ 11.1 fF/μm², for which an impedance analyzer has failed to measure capacitance at 1 MHz. Differences in the voltage coefficient of capacitance and dielectric constant (k) were also investigated.
Sponsorship	IEEE Electron Devices Society
Starting Page	1303
Ending Page	1305
Page Count	3
File Size	250122
File Format	PDF
ISSN	07413106
Volume Number	33
Issue Number	9
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-09-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MIM capacitors Dielectrics Capacitance Aluminum oxide Impedance Dielectric measurements Leakage current voltage coefficient metal–insulator–metal (MIM) capacitor time domain reflectometry (TDR)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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Dielectric Stacking Effect of $hbox{Al}_{2} hbox{O}_{3}$ and $hbox{HfO}_{2}$ in Metal–Insulator–Metal Capacitor

Characterizing Voltage Linearity and Leakage Current of High Density $hbox{Al}_{2}hbox{O}_{3}/hbox{HfO}_{2}/hbox{Al}_{2}hbox{O}_{3}$ MIM Capacitors

Effective Modulation of Quadratic Voltage Coefficient of Capacitance in MIM Capacitors Using $hbox{Sm}_{2}hbox{O}_{3}/hbox{SiO}_{2}$ Dielectric Stack

High-Performance Metal–Insulator-Metal Capacitor Using Stacked $hbox{TiO}_{2}/hbox{Y}_{2}hbox{O}_{3}$ as Insulator

Performance Improvement of $hbox{Sm}_{2}hbox{O}_{3}$ MIM Capacitors by Using Plasma Treatment After Dielectric Formation

High-Performance Metal–Insulator–Metal Capacitors Using Europium Oxide as Dielectric

High-Performance Metal–Insulator–Metal Capacitors With $hbox{HfTiO}/hbox{Y}_{2}hbox{O}_{3}$ Stacked Dielectric

High-Performance Metal–Insulator–Metal Capacitors Using Amorphous $hbox{BaSm}_{2}hbox{Ti}_{4}hbox{O}_{12}$ Thin Film

Electrical Properties of Amorphous $hbox{Bi}_{5} hbox{Nb}_{3}hbox{O}_{15}$ Thin Film for RF MIM Capacitors

Capacitance Analysis of Highly Leaky $hbox{Al}_{2} hbox{O}_{3}$ MIM Capacitors Using Time Domain Reflectometry

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