NDLI: A High-Voltage LDMOS Compatible With High-Voltage Integrated Circuits on p-Type SOI Layer

Content Provider	IEEE Xplore Digital Library
Author	Xiaorong Luo Tianfei Lei Yuangang Wang Huanmei Gao Jian Fang Ming Qiao Wei Zhang Hao Deng Bo Zhang Zhaoji Li Zhiqiang Xiao Zhengcai Chen Jing Xu
Copyright Year	1980
Abstract	Breakdown mechanism for a high-voltage n-channel LDMOS compatible with a high-voltage integrated circuit (HVIC) on a p-type silicon-on-insulator (SOI) layer is investigated theoretically and experimentally. The device is characterized by buried n-islands on a buried oxide layer (BOX). For the proposed structure, ionized donors in n-islands enhance the bottom-interface electric field of the SOI layer from 10 V/mum in the conventional devices on p-SOI layer to 27 V/mum, resulting in enhancement of the BOX electric field EI from 30 to 82 V/mum. Moreover, holes located between the depleted n-islands help to increase EI as well. Both improve the blocking capability of the device. A 660-V SOI LDMOS is obtained, in which the implanted n-type drift region, along with the n-islands on a p-type SOI layer, realizes the self-isolation in HVIC.
Sponsorship	IEEE Electron Devices Society
Starting Page	1093
Ending Page	1095
Page Count	3
File Size	480262
File Format	PDF
ISSN	07413106
Volume Number	30
Issue Number	10
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-10-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon on insulator technology Dielectric substrates Dielectric devices Circuits High-voltage techniques Power semiconductor devices Isolation technology Biomembranes Etching Region 8 silicon-on-insulator (SOI) technology Electric fields high-voltage techniques power semiconductor devices
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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