NDLI: High-Performance Metal–Insulator-Metal Capacitor Using Stacked <formula formulatype=inline><tex Notation=TeX>$hbox{TiO}_{2}/hbox{Y}_{2}hbox{O}

Content Provider	IEEE Xplore Digital Library
Author	Yung-Hsien Wu Chia-Chun Lin Yao-Chung Hu Min-Lin Wu Jia-Rong Wu Lun-Lun Chen
Copyright Year	1980
Abstract	Metal-insulator-metal (MIM) capacitors with single TiO₂ and a TiO₂/Y₂O₃ stack as an insulator are explored in this letter. It is found that, at the process temperature higher than 400°C, TiO₂ MIM capacitors demonstrate a high capacitance density at the price of an unacceptably high leakage current and voltage coefficient of capacitance (VCC). On the other hand, with the process temperature of 500°C, TiO₂/Y₂O₃ MIM capacitors display desirable characteristics in terms of a large capacitance density of 32.2 fF/μm², a low VCC of 3490 ppm/ V², small frequency dispersion, and a low leakage current of 4.5 × 10^-9 A/cm² at -1 V. The Y₂O₃ film not only provides a high dielectric-electrode band offset but also possesses high thermal stability against crystallization; both are important to suppress leakage current. In addition, the Y₂O₃ film prevents a TiO₂ film from crystallization at 500°C due to the increased entropy caused by incorporated Y atoms, and the amorphous TiO₂ film offers a high κ value to achieve a large capacitance density without sacrificing leakage current and VCC.
Sponsorship	IEEE Electron Devices Society
Starting Page	1107
Ending Page	1109
Page Count	3
File Size	427170
File Format	PDF
ISSN	07413106
Volume Number	32
Issue Number	8
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-08-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MIM capacitors Capacitance Leakage current Temperature measurement Annealing Dielectrics Crystallization voltage coefficient of capacitance (VCC) Amorphous high-$\kappa$ leakage current metal-insulator-metal (MIM) capacitors $\hbox{TiO}_{2}/\hbox{Y}_{2}\hbox{O}_{3}$ stack
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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