NDLI: Evaluation of Silicon Detectors With Integrated JFET for Biomedical Applications

Content Provider	IEEE Xplore Digital Library
Author	Safavi-Naeini, M. Franklin, D.R. Lerch, M.L.F. Petasecca, M. Pignatel, G.U. Reinhard, M. Betta, G.-F.D. Zorzi, N. Rosenfeld, A.B.
Copyright Year	1963
Abstract	This paper presents initial results from electrical, spectroscopic and ion beam induced charge (IBIC) characterisation of a novel silicon PIN detector, featuring an on-chip n -channel JFET and matched feedback capacitor integrated on its p-side (frontside). This structure reduces electronic noise by minimising stray capacitance and enables highly efficient optical coupling between the detector back-side and scintillator, providing a fill factor of close to 100%. The detector is specifically designed for use in high resolution gamma cameras, where a pixellated scintillator crystal is directly coupled to an array of silicon photodetectors. The on-chip JFET is matched with the photodiode capacitance and forms the input stage of an external charge sensitive preamplifier (CSA). The integrated monolithic feedback capacitor eliminates the need for an external feedback capacitor in the external electronic readout circuit, improving the system performance by eliminating uncontrolled parasitic capacitances. An optimised noise figure of 152 electrons RMS was obtained with a shaping time of 2 mus and a total detector capacitance of 2 pF. The energy resolution obtained at room temperature (2degC) at 27 keV (direct interaction of I-125 gamma rays) was 5.09%, measured at full width at half maximum (FWHM). The effectiveness of the guard ring in minimising the detector leakage current and its influence on the total charge collection volume is clearly demonstrated by the IBIC images.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	1051
Ending Page	1055
Page Count	5
File Size	638276
File Format	PDF
ISSN	00189499
Volume Number	56
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon Detectors Capacitors Parasitic capacitance Spectroscopy Ion beams Optical feedback Noise reduction Optical noise Optical coupling
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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