NDLI: Charge Collection Efficiency Measurements of Heavily Irradiated Segmented n-in-p and p-in-n Silicon Detectors for Use at the Super-LHC

Content Provider	IEEE Xplore Digital Library
Author	Affolder, A. Allport, P. Casse, G.
Copyright Year	1963
Abstract	The planned luminosity upgrade of the Large Hadron Collider at CERN (Super-LHC) will provide a challenging environment for the tracking and vertexing detector systems. With a proposed nearly 10-fold luminosity increase to 10³⁵ cm² middot s^-1, the innermost devices will have to be able to withstand a hadron dose on the order of 1times10¹⁶ 1 MeV neutron equivalent per square centimeter over the anticipated five year lifetime of the experiments. Planar, segmented silicon detectors with n-strip readout are one of the radiation tolerant technologies under consideration for use for the Super-LHC tracking detectors in either pixel or strip geometries. This paper details measurements made with n-strip (n-in-p) and p-strip (p-in-n) planar devices that have been irradiated to doses as high as 1times10¹⁶ n_eq cm^-2 with reactor neutrons and fast protons. The doses under study cover the expected range of final fluences for the different tracking systems of the ATLAS and CMS experiments at the Super-LHC. The charge collection measurements have been carried out using analogue, high-speed (40 MHz) electronics and a Strontium electron source. These measurements show that p-in-n sensors are not radiation tolerant enough for the requirements of the micro-strip detectors at the SLHC; whereas, the charge collection properties exhibited by the n-in-p strip devices may be sufficient for all tracker regions (pixels and strips) of the SLHC assuming that appropriate low noise and threshold readout electronics are designed and adequate bias voltage can be routed to the sensors.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	765
Ending Page	770
Page Count	6
File Size	223446
File Format	PDF
ISSN	00189499
Volume Number	56
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Current measurement Charge measurement Radiation detectors Strips Neutrons Silicon radiation detectors Large Hadron Collider Geometry Inductors Protons super-LHC Charge collection efficiency radiation damage silicon micro-strip detectors
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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Determination of the Charge Collection Efficiency in Neutron Irradiated Silicon Detectors

Effects of Varying Substrate Thickness on the Collected Charge From Highly Irradiated Planar Silicon Detectors

Free Charge Carriers Trapping Properties in Neutron-Irradiated DOFZ Silicon Pad Detectors

Charge Collection Efficiency Measurements for Segmented Silicon Detectors Irradiatedto $1times 10^{16} {hbox {n}} {hbox {cm}}^{-2}$

Efficiency of non-uniformly irradiated double-sided silicon strip detectors

Charge collection and noise analysis of heavily irradiated silicon detectors

Evaluation of Floating Zone and Epitaxial Planar Silicon Detectors With Different Substrate Thickness After Irradiation up to $2times 10^{16}$ ${rm n}_{rm eq}$ cm$^{- 2}$

Simulation of Signals in Ultra Radiation-Hard Silicon Pixel Detectors

Charge Collection Studies and Electrical Measurements of Heavily Irradiated 3D Double-Sided Sensors and Comparison to Planar Strip Detectors

Charge Collection Efficiency Measurements of Heavily Irradiated Segmented n-in-p and p-in-n Silicon Detectors for Use at the Super-LHC

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Free Charge Carriers Trapping Properties in Neutron-Irradiated DOFZ Silicon Pad Detectors

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