NDLI: Schottky-Barrier Carbon Nanotube Field-Effect Transistor Modeling

Content Provider	IEEE Xplore Digital Library
Author	Hazeghi, A. Krishnamohan, T. Wong, H.-S.P.
Copyright Year	1963
Abstract	The theoretical performance of carbon nanotube field-effect transistors (CNFETs) with Schottky barriers (SBs) is examined by means of a general ballistic model. A novel approach is used to treat the SBs at the metal-nanotube contacts as mesoscopic scatterers by modifying the distribution functions for carriers in the channel. Noticeable current reduction is observed compared to previous ballistic models without SBs. Evanescent-mode analysis is used to derive a scale length and the potential profile near the contacts for radially symmetric CNFET structures. Band-to-band tunneling current and ambipolar conduction are also treated. The effects of different device geometries and different nanotube chiralities on the drain-current are studied using this simple model. Quantum conductance degradation due to SBs is also observed
Sponsorship	IEEE Electron Devices Society
Starting Page	439
Ending Page	445
Page Count	7
File Size	503891
File Format	PDF
ISSN	00189383
Volume Number	54
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-03-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	simulation Ballistic transport carbon nanotube CNFET compact model evanescent-mode analysis field-effect transistor mesoscopic scatterer modeling nanoelectronics Schottky-barrier
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Schottky-Barrier Carbon Nanotube Field Effect Transistor Modeling

A Compact SPICE Model for Carbon-Nanotube Field-Effect Transistors Including Nonidealities and Its Application—Part I: Model of the Intrinsic Channel Region

Numerical Analysis of Coaxial Double Gate Schottky Barrier Carbon Nanotube Field Effect Transistors

Noniterative Compact Modeling for Intrinsic Carbon-Nanotube FETs: Quantum Capacitance and Ballistic Transport

1 analytical model of 1d carbon-based schottky-barrier transistors (909).

Schottky Barrier Carbon Nanotube Transistor: Compact Modeling, Scaling Study, and Circuit Design Applications

Gate dielectric material dependence of current-voltage characteristics of ballistic Schottky barrier graphene nanoribbon field-effect transistor and carbon nanotube field-effect transistor for different channel lengths

High-Frequency Ballistic Transport Phenomena in Schottky Barrier CNTFETs

A Compact SPICE Model for Carbon-Nanotube Field-Effect Transistors Including Nonidealities and Its Application—Part II: Full Device Model and Circuit Performance Benchmarking

Schottky-Barrier Carbon Nanotube Field-Effect Transistor Modeling

Similar Documents

Schottky-Barrier Carbon Nanotube Field Effect Transistor Modeling

A Compact SPICE Model for Carbon-Nanotube Field-Effect Transistors Including Nonidealities and Its Application—Part I: Model of the Intrinsic Channel Region

Numerical Analysis of Coaxial Double Gate Schottky Barrier Carbon Nanotube Field Effect Transistors

Noniterative Compact Modeling for Intrinsic Carbon-Nanotube FETs: Quantum Capacitance and Ballistic Transport

1 analytical model of 1d carbon-based schottky-barrier transistors (909).

Schottky Barrier Carbon Nanotube Transistor: Compact Modeling, Scaling Study, and Circuit Design Applications

Gate dielectric material dependence of current-voltage characteristics of ballistic Schottky barrier graphene nanoribbon field-effect transistor and carbon nanotube field-effect transistor for different channel lengths

High-Frequency Ballistic Transport Phenomena in Schottky Barrier CNTFETs

A Compact SPICE Model for Carbon-Nanotube Field-Effect Transistors Including Nonidealities and Its Application—Part II: Full Device Model and Circuit Performance Benchmarking

Schottky-Barrier Carbon Nanotube Field-Effect Transistor Modeling