NDLI: SThM Temperature Mapping and Nonlinear Thermal Resistance Evolution With Bias on AlGaN/GaN HEMT Devices

Content Provider	IEEE Xplore Digital Library
Author	Aubry, R. Jacquet, J.-C. Weaver, J. Durand, O. Dobson, P. Mills, G. di Forte-Poisson, M.-A. Cassette, S. Delage, S.-L.
Copyright Year	1963
Abstract	Channel temperature has a strong impact on the performance of a microwave power transistor. In particular, it has a strong influence on the power gain, energetic efficiency, and reliability of the device. The thermal optimization of device geometry is therefore a key issue, together with precise measurements of temperature within the channel area. In this paper, we have used scanning thermal microscopy to perform temperature mapping, at variable dc bias points, on an AlGaN/GaN high-electron mobility transistor made on epilayers grown on silicon carbide substrate. We have analyzed the variation of the thermal resistance values, which are deduced from these measurements, with bias conditions V_GS and V_DS. The observed nonlinear behavior is found to be in excellent agreement with physical simulations, strongly pointing out the large variability of the extension of the dissipation area with the dc bias conditions
Sponsorship	IEEE Electron Devices Society
Starting Page	385
Ending Page	390
Page Count	6
File Size	808479
File Format	PDF
ISSN	00189383
Volume Number	54
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-03-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	temperature measurement GaN heterojunction field-effect transistor (HFET) high-electron mobility transistor (HEMT) power semiconductor devices semiconductor device modeling
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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Large-signal performance of deep submicrometer AlGaN/AlN/GaNHEMTs with a field-modulating plate

On the temperature and carrier density dependence of electron saturation velocity in an AlGaN/GaN HEMT

$V_{T} - V_{rm SUB}$ Characterization of AlGaN/GaN HFET With p-Type Body Layer

Measurements of unity gain cutoff frequency and saturation velocity of a GaN HEMT transistor

Transient thermal characterization of AlGaN/GaN HEMTs grown on silicon

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Gate-Voltage Independence of Electron Mobility in Power AlGaN/GaN HEMTs

Stable CW operation of field-plated GaN-AlGaN MOSHFETs at 19 W/mm

Thermal resistance calculation of AlGaN-GaN devices

SThM Temperature Mapping and Nonlinear Thermal Resistance Evolution With Bias on AlGaN/GaN HEMT Devices

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