NDLI: Aperture-Collimated Double-Gated Silicon Field Emitter Arrays

Content Provider	IEEE Xplore Digital Library
Author	Liang-Yu Chen Akinwande, A.I.
Copyright Year	1963
Abstract	We report the fabrication and characterization of aperture-collimated double-gated silicon field emitter arrays (FEAs) with conical tips below the gate aperture. Electrical measurements show that the anode current is relatively independent of the focus voltage consistent with numerical simulation of the structure using finite-element modeling. Optical measurements show that the device produces a small beam spot, which is roughly the same size as the silicon FEA footprint with an estimated beam divergence between 0.1deg and 0.4deg that is independent of the focus voltage. The experimental results are consistent with numerical simulation of the double-gated field emitter structure with the tip below the gate. Both experimental and numerical simulation results show that the focus field factor beta _F is much smaller than the gate field factor beta_G. Numerical simulation of other structures with the tip above the gate and the tip in-plane with the gate show that beta_F is much higher than beta_G or has a comparable value to beta _G
Sponsorship	IEEE Electron Devices Society
Starting Page	601
Ending Page	608
Page Count	8
File Size	971494
File Format	PDF
ISSN	00189383
Volume Number	54
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-03-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	focusing Electron beam collimation electron emission
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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