NDLI: Schottky-Barrier Carbon Nanotube Field Effect Transistor Modeling

Content Provider	IEEE Xplore Digital Library
Author	Hazeghi, A. Krishnamohan, T. Wong, H.-S.P.
Copyright Year	2006
Description	Author affiliation: Center for Integrated Systems and Department of Electrical Engineering, Stanford University, Stanford, CA 94305. Email: ahazeghi@stanford.edu (Hazeghi, A.)
Abstract	The theoretical performance of Carbon Nanotube Field Effect Transistors (CNFETs) with Schottky barriers is examined by means of a ballistic model. A novel approach is used to treat the Schottky barriers at the metal-nanotube contacts as mesoscopic scatterers. Evanescent-mode analysis is used to derive a length-scale and potential profile for the device. Noticeable current reduction is observed compared to previous ballistic models without Schottky barriers. The effects of device geometry, nanotube diameter and chirality as well as Schottky barrier height on the drain current are studied. Quantum conductance degradation due to Schottky barriers is also observed.
Starting Page	238
Ending Page	241
File Size	938253
Page Count	4
File Format	PDF
ISBN	1424400775
DOI	10.1109/NANO.2006.247618
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-07-17
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	CNTFETs Schottky barriers Geometry Nanoscale devices Carbon nanotubes Poisson equations Contacts Particle scattering Degradation Physics evanescent-mode analysis CNFET carbon nanotube transistor Schottky barrier ballistic channel
Content Type	Text
Resource Type	Article

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