NDLI: Enhanced electron emission from phosphorus-doped diamond-clad silicon field emitter arrays

Content Provider	IEEE Xplore Digital Library
Author	Ku, T.K. Chen, S.H. Yang, C.D. She, N.J. Wang, C.C. Chen, C.F. Hsieh, I.J. Cheng, H.C.
Copyright Year	1980
Abstract	Undoped and phosphorus (P)-doped diamond-clad Si field emitter arrays have been successfully fabricated using microwave plasma chemical vapor deposition (MPCVD) technology. The electron emission from the blunt diamond-clad microtips are much higher than those for the pure Si tips with sharp curvature due to a lower work function. Furthermore, the characteristics of emission current against applied voltage for the P-doped diamond-clad tips show superior emission at lower field to the undoped ones. After the examination of Auger electron spectroscopy (AES) and electrical characteristics of as-grown diamond, such a significant enhancement of the electron emission from the P-doped diamond-clad tips is attributed to a higher electron conductivity and defect densities.
Sponsorship	IEEE Electron Devices Society
Starting Page	208
Ending Page	210
Page Count	3
File Size	425723
File Format	PDF
ISSN	07413106
Volume Number	17
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1996-05-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electron emission Field emitter arrays Microwave antenna arrays Plasma chemistry Plasma properties Chemical vapor deposition Chemical technology Microwave technology Voltage Spectroscopy
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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