NDLI: Investigation of the thermal stability of reactively sputter-deposited TiN MOS gate electrodes

Content Provider	IEEE Xplore Digital Library
Author	Sjoblom, G. Westlinder, J. Olsson, J.
Copyright Year	1963
Abstract	The effective work function of TiN, deposited by reactive magnetron sputtering, was found to be unaltered at /spl sim/5 eV after rapid thermal processing (RTP) annealing in nitrogen atmosphere at temperatures below 700/spl deg/C. However, further increase in the RTP temperature lowered the extracted work function by 0.4-0.5 eV to midgap values. In this brief, RTP anneals of TiN/SiO/sub 2//p-Si MOS capacitors were evaluated by extracting the metal gate TiN work function from capacitance-voltage measurements of MOS capacitors with multiple SiO/sub 2/ thicknesses. The RTP anneals were performed in nitrogen between 600/spl deg/C and 1000/spl deg/C for 30 s. The effective oxide charge density in the capacitors increased by a factor of five at RTP temperatures exceeding 800/spl deg/C. The resistivity seems to decrease slightly with increasing RTP temperature. The crystallographic orientation of the TiN films remain (111) after annealing up to 900/spl deg/C and is apparently not responsible for the change in work function. Analysis by X-ray photoelectron spectroscopy indicates no significant change in the binding states of titanium and nitrogen in the TiN/SiO/sub 2/ interface with increasing temperature.
Sponsorship	IEEE Electron Devices Society
Starting Page	2349
Ending Page	2352
Page Count	4
File Size	184081
File Format	PDF
ISSN	00189383
Volume Number	52
Issue Number	10
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-10-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOS capacitors Electrodes Sputtering Work function Rapid thermal annealing Titanium compounds Silicon compounds work function Metal gate reactive sputtering titanium nitride
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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