NDLI: Measurement and modeling of the electron impact-ionization coefficient in silicon up to very high temperatures

Content Provider	IEEE Xplore Digital Library
Author	Reggiani, S. Gnani, E. Rudan, M. Baccarani, G. Corvasce, C. Barlini, D. Ciappa, M. Fichtner, W. Denison, M. Jensen, N. Groos, G. Stecher, M.
Copyright Year	1963
Abstract	In this paper, an experimental investigation on high-temperature electron impact-ionization in silicon is carried out with the aim of improving the qualitative and quantitative understanding of carrier transport under electrostatic discharge (ESD) conditions. Special test devices were designed and manufactured using Infineon's SPT5 technology, namely: a bipolar junction transistor (BJT), a static-induction transistor (SIT) and a vertical DMOS transistor (VDMOS), all of them with a cylindrical geometry. The measurements were carried out using a customized measurement setup that allows very high operating temperatures to be reached. A novel extraction methodology allowing for the determination of the impact-ionization coefficient against electric field and lattice temperature has been used. The experiments, carried out up to 773 K, confirm a previous theoretical investigation on impact-ionization, and widely extend the validity range of the compact model here proposed for implementation in device simulation tools. This is especially useful to predict the failure threshold of ESD-protection and power devices.
Sponsorship	IEEE Electron Devices Society
Starting Page	2290
Ending Page	2299
Page Count	10
File Size	964586
File Format	PDF
ISSN	00189383
Volume Number	52
Issue Number	10
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-10-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Semiconductor device modeling Impact ionization Electrostatic discharges Charge carrier mobility Bipolar transistors Static induction transistors MOSFETs predictive TCAD tools Electrostatic discharge (ESD) events high-temperature device characterization impact-ionization nonequilibrium Auger effect
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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