NDLI: Design criteria of high-Voltage lateral RESURF JFETs on 4H-SiC

Content Provider	IEEE Xplore Digital Library
Author	Kuang Sheng Shuntao Hu
Copyright Year	1963
Abstract	Integrated power electronics on SiC have great potential in future power electronics applications. In this paper, a novel vertical channel lateral junction field-effect transistor structure with reduced surface electric field effect is proposed for the first time on 4 H-SiC to address existing challenges in lateral power devices on SiC. Based on an experimentally proven channel design, the detailed design procedure of such a device has been investigated. Design criteria to optimize device forward blocking as well as conduction characteristics are studied. Parameter tolerance and design windows are discussed considering practical issues in device fabrication. Designs that will lead to an optimized tradeoff between device breakdown voltage and specific on-resistance are shown. With an 8-/spl mu/m-long drift region, a 1535-V breakdown voltage and 3.24 m/spl Omega//spl middot/cm/sup 2/ specific on-resistance can be achieved. This represents a figure-of-merit of 737 MW/cm/sup 2/, about 100 times higher than that of the best normally off lateral power devices reported in the literature. The proposed device can be an attractive candidate for power integrated circuit on SiC.
Sponsorship	IEEE Electron Devices Society
Starting Page	2300
Ending Page	2308
Page Count	9
File Size	580083
File Format	PDF
ISSN	00189383
Volume Number	52
Issue Number	10
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-10-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	JFETs Power FETs Power integrated circuits Semiconductor device modeling Electric field effects Silicon compounds SiC High voltage junction field-effect transistor (JFET) power integrated circuits power semiconductor switches reduced surface electric field (RESURF) effect
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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