NDLI: Temporal and spatial current stability of smart field emission arrays

Content Provider	IEEE Xplore Digital Library
Author	Ching-Yin Hong Akinwande, A.I.
Copyright Year	1963
Abstract	Emission current stability and the spatial uniformity of field emission devices are improved when a lightly doped drain MOSFET (LD-MOSFET) is integrated with a field emission array (FEA). At comparable current levels, the emission noise (/spl Delta/I/I) decreased from 16.9% to 1.8%. Emission current fluctuation was reduced in the integrated device compared to the FEA device even in the presence of gases. Spatial current uniformity was achieved in the integrated MOSFET/FEA devices at different wafer positions and for different array sizes. The results are explained by a two-step field emission process, which consists of an electron supply step determined by the MOSFET inversion layer and an electron transmission step determined by the field emission barrier width. The device structure also results in low voltage control of emission current.
Sponsorship	IEEE Electron Devices Society
Starting Page	2323
Ending Page	2328
Page Count	6
File Size	668635
File Format	PDF
ISSN	00189383
Volume Number	52
Issue Number	10
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-10-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFETs Circuit stability spatial uniformity Current stability MOSFET silicon field emission arrays (FEAs)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Silicon Field Emitter Arrays With Current Densities Exceeding 100 A/cm² at Gate Voltages Below 75 V

Temporal and spatial current stability of the integrated LD-MOSFET/field emission arrays

Spatial uniformity of interface trap distribution in MOSFETs

Design and Fabrication of 4H-SiC RF MOSFETs

Field Emission From a MOSFET-Controlled ZnO-Nanowire Cold Cathode

Pseudo-MOSFET Drain-Current Transients: Influence of the Substrate

Metal gate work function engineering on gate leakage of MOSFETs

A monolithic field emitter array with a JFET

Aspects of field emission from silicon diode arrays

Temporal and spatial current stability of smart field emission arrays

Similar Documents

Silicon Field Emitter Arrays With Current Densities Exceeding 100 A/cm2 at Gate Voltages Below 75 V

Temporal and spatial current stability of the integrated LD-MOSFET/field emission arrays

Spatial uniformity of interface trap distribution in MOSFETs

Design and Fabrication of 4H-SiC RF MOSFETs

Field Emission From a MOSFET-Controlled ZnO-Nanowire Cold Cathode

Pseudo-MOSFET Drain-Current Transients: Influence of the Substrate

Metal gate work function engineering on gate leakage of MOSFETs

A monolithic field emitter array with a JFET

Aspects of field emission from silicon diode arrays

Temporal and spatial current stability of smart field emission arrays

Silicon Field Emitter Arrays With Current Densities Exceeding 100 A/cm² at Gate Voltages Below 75 V