NDLI: InP HEMT downscaling for power applications at W band

Content Provider	IEEE Xplore Digital Library
Author	Medjdoub, F. Zaknoune, M. Wallart, X. Gaquiere, C. Dessenne, F. Thobel, J.-L.
Copyright Year	1963
Abstract	We have developed new solutions for InP high-electron mobility transistor (HEMT) scaling for power applications at W band. We have shown that the use of a small barrier thickness in order to respect the aspect ratio for a 70-nm gate length results in a significant kink effect and high gate source capacitances. We have also shown through a theoretical study that a structure containing an InP layer between the cap layer and the barrier would support both the frequency performances and the breakdown voltage. Thus, we propose an HEMT structure containing a thick InP/AlInAs composite barrier and where the gate is buried into the barrier. This enables us to respect the aspect ratio and simultaneously to obtain an important drain current density without observing any kink effect. Moreover, we have applied this process to structures containing innovative large band-gap InP and InAsP channels. We have achieved the best frequency performances ever reached for an InP channel HEMT structure. Power measurements at 94 GHz were performed on these devices. The InAsP channel HEMT demonstrated a maximum output power of 260 mW/mm at 3 V of drain voltage with 5.9-dB power gain and a power-added efficiency of 11%. These results are favorably comparable to the state-of-the-art of InP-based HEMT at this frequency.
Sponsorship	IEEE Electron Devices Society
Starting Page	2136
Ending Page	2143
Page Count	8
File Size	1291663
File Format	PDF
ISSN	00189383
Volume Number	52
Issue Number	10
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-10-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MODFETs Power MODFETs Millimeter wave FETs Indium compounds Aluminum compounds power Compound semiconductor high-electron mobility transistor (HEMT) high frequency InAsP channel InP microwave
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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