NDLI: Effect of collector structure on the FBSOA of the dielectrically-isolated LIGBT

Content Provider	IEEE Xplore Digital Library
Author	Nagapudi, V. Sunkavalli, R. Jayant Baliga, B.
Copyright Year	1963
Abstract	In this paper, the dependence of the forward biased safe operating area (FBSOA) on the collector structures of the dielectrically-isolated (DI) lateral insulated gate bipolar transistor (LIGBT) has been analyzed. In addition to the on-state and switching characteristics, pulsed measurements were performed to determine the FBSOA of these devices. Two-dimensional (2-D) numerical simulations were performed to understand the physics behind the operation of devices fabricated with various collector designs. These studies reveal that some of the structures behave like the conventional LIGBT, while others behave like the LDMOSFET with respect to their FBSOA. Some of the structures also exhibit a unique high-voltage blocking ability while carrying current, while having much smaller breakdown voltages.
Sponsorship	IEEE Electron Devices Society
Starting Page	1155
Ending Page	1161
Page Count	7
File Size	170443
File Format	PDF
ISSN	00189383
Volume Number	45
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-05-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Insulated gate bipolar transistors Pulse measurements Performance evaluation Dielectric substrates Numerical simulation Physics Fabrication Wafer bonding Medical simulation Dielectric measurements
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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