NDLI: Monte Carlo simulation of electron transport properties in extremely thin SOI MOSFET's

Content Provider	IEEE Xplore Digital Library
Author	Gamiz, F. Lopez-Villanueva, J.A. Roldan, J.B. Carceller, J.E. Cartujo, P.
Copyright Year	1963
Abstract	Electron mobility in extremely thin-film silicon-on-insulator (SOI) MOSFET's has been simulated. A quantum mechanical calculation is implemented to evaluate the spatial and energy distribution of the electrons. Once the electron distribution is known, the effect of a drift electric field parallel to the Si-SiO/sub 2/ interfaces is considered. The Boltzmann transport equation is solved by the Monte Carlo method. The contribution of phonon, surface-roughness at both interfaces, and Coulomb scattering has been considered. The mobility decrease that appears experimentally in devices with a silicon film thickness under 20 nm is satisfactorily explained by an increase in phonon scattering as a consequence of the greater confinement of the electrons in the silicon film.
Sponsorship	IEEE Electron Devices Society
Starting Page	1122
Ending Page	1126
Page Count	5
File Size	101318
File Format	PDF
ISSN	00189383
Volume Number	45
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-05-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFET circuits Semiconductor films Poisson equations Electron mobility Particle scattering Silicon on insulator technology Phonons Very large scale integration Computational modeling Semiconductor thin films
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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