NDLI: Analysis of dual-gate LIGBT with gradual hole injection

Content Provider	IEEE Xplore Digital Library
Author	You-Sang Lee Byeong-Hoon Lee Won-Oh Lee Man-Koo Han Yearn-Ik Choi
Copyright Year	1963
Abstract	The device characteristics of a gradual hole injection dual-gate lateral insulated gate bipolar transistor (GHI-LIGBT) is analyzed with the experiment and two-dimensional (2-D) numerical simulation. The hole injection mechanism in the GHI-LIGBT is investigated in detail and the device characteristics of the GHI-LIGBT are studied in terms of the various device parameters such as the p/sup +/ injector length and the injection gate length. The hole injection characteristics and latch-up characteristics in the GHI-LIGBT are also presented as a function of temperature. The experimental results demonstrate that an on-state voltage drop in GHI-LIGBT is reduced by 1 V, compared with the conventional SA-LIGBT and the negative resistance regime is eliminated since the injection of holes is initiated at the lower anode voltage. It is also found that the low on-state voltage drop in the GHI-LIGBT can be achieved without sacrificing the inherent high switching speed in shorted anode (SA) LIGBT structures.
Sponsorship	IEEE Electron Devices Society
Starting Page	2154
Ending Page	2160
Page Count	7
File Size	145163
File Format	PDF
ISSN	00189383
Volume Number	48
Issue Number	9
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-09-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Insulated gate bipolar transistors
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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