NDLI: Thin silicide development for fully-depleted SOI CMOS technology

Content Provider	IEEE Xplore Digital Library
Author	Liu, H.I. Burns, J.A. Keast, C.L. Wyatt, P.W.
Copyright Year	1963
Abstract	Ultrathin silicide with thickness less than 30 nm and specific contact resistivity to silicon less than mid-10/sup -7//spl Omega/-cm/sup 2/ is necessary for achieving low contact resistance in a sub-0.25-/spl mu/m fully-depleted (FD) silicon-on-insulator (SOI) CMOS technology. This contact problem becomes even more severe as one continues to scale down the device dimensions. We first studied the effects of source/drain series resistance and gate sheet resistance on the device speed performance and obtained a set of desired design criteria. These were used along with a transmission line model to yield a silicide design space, which was then used to evaluate the experimental results. Both cobalt and titanium silicide processes were implemented and found to satisfy the design criteria. Final device characteristics were also measured. Several process integration issues related to contact dielectric deposition and contact barrier integrity were found to greatly impact the final contact properties. These along with the detailed fabrication process are discussed.
Sponsorship	IEEE Electron Devices Society
Starting Page	1099
Ending Page	1104
Page Count	6
File Size	172215
File Format	PDF
ISSN	00189383
Volume Number	45
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-05-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	CMOS technology Silicides Silicon on insulator technology Conductivity Contact resistance Cobalt Titanium Dielectric measurements Transmission line measurements Fabrication
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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