NDLI: Stress-induced current in nitride and oxidized nitride thin films

Content Provider	IEEE Xplore Digital Library
Author	Mazumder, M.K. Kobayashi, K. Mitsuhashi, J. Koyama, H.
Copyright Year	1963
Abstract	We have studied the stress-induced current in nitride and oxidized nitride DRAM films using MOS capacitors and p-channel MOSFET transistors. When the gate current is measured as a function of electric field in MOS capacitors, gate current on oxidized nitride film is considerably lower than in nitride film. After subjecting both films to a constant current stress, however, measured gate current in oxidized nitride film becomes much greater than in nitride film. Using PMOSFET transistor, it is observed that holes dominate the current conduction both for nitride and oxidized nitride films. When the films are subjected to a constant current stress, both the hole and electron currents increased compared to those before stress. After the constant current stress. The electron current is increased more in the nitride film, while in oxidized nitride film, hole current increase is dominant. Hence it can be said that the current increase in nitride films is due to the stress-generated trap of electrons, while in oxidized nitride film, it is due to stress-generated hole traps in the top oxide.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	2417
Ending Page	2422
Page Count	6
File Size	701713
File Format	PDF
ISSN	00189383
Volume Number	41
Issue Number	12
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1994-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Transistors Charge carrier processes MOS capacitors MOSFET circuits Current measurement Electron traps Random access memory Electric variables measurement Stress measurement Conductive films
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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