NDLI: Characteristics of sub-1/4-/spl mu/m gate surface channel PMOSFET's using a multilayer gate structure of boron-doped poly-Si on thin nitrogen-doped poly-Si

Content Provider	IEEE Xplore Digital Library
Author	Okazaki, Y. Nakayama, S. Miyake, M. Kobayashi, T.
Copyright Year	1963
Abstract	This paper reports the effects of a new p/sup +/ gate structure (MBN gate) on the properties of surface channel PMOSFET's with an extremely thin gate oxide. The MBN gate is a multilayer gate structure of boron-doped poly Si on thin nitrogen-doped poly-Si. The thin nitrogen-doped Si layer effectively suppresses boron diffusion, so that the gate poly Si can be doped with boron in high concentration without the fear of boron penetration. Gate depletion effects are well suppressed. Effective hole mobility is improved due to the reduction of the initial interface state density. The hot-hole induced interface state generation is shown to be the dominant clause of degradation in the 1/4-/spl mu/m level PMOSFET's, and less Gm degradation is found in the MBN-gate PMOSFET's than in conventional p/sup +/-gate PMOSFET's. Finally, with respect to the reliability of the gate oxide, a conventional p/sup +/ gate with boron penetration exhibits an increase in short-time defect related breakdown during constant-current FN stressing. Short-time defect-related breakdown is not observed in the MBN gate but a slight decrease in charge to breakdown.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	2369
Ending Page	2375
Page Count	7
File Size	749922
File Format	PDF
ISSN	00189383
Volume Number	41
Issue Number	12
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1994-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFET circuits Nonhomogeneous media Boron Degradation Fabrication Hot carriers Electric breakdown Interface states Threshold voltage Controllability
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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