NDLI: Application of selective epitaxial silicon and chemo-mechanical polishing to bipolar transistors

Content Provider	IEEE Xplore Digital Library
Author	Nguyen, C.T. Kuehne, S.C. Wong, S.S. Garling, L.K. Drowley, C.
Copyright Year	1963
Abstract	Successful demonstration of single-polysilicon bipolar transistors fabricated using selective epitaxial growth (SEG) and chemo-mechanical polishing (CMP) is reported. The pedestal structure made possible by the SEG/CMP process combination results in significantly reduced extrinsic-base collector capacitance. Cut-off frequency (f/sub T/) of devices with emitter stripe width of 1 /spl mu/m, a base width of 110 nm, and a peak base doping of 3/spl times/10/sup 18/ cm/sup -3/ have been observed to improve from 16 GHz to 22 GHz when the extrinsic-base collector overlap is decreased from 1 /spl mu/m to 0.2 /spl mu/m. Leakage current, often a problem for SEG structures, has been reduced to 27 nA/cm/sup 2/ for the area component, and 10 nA/cm for the edge component, by (1) appropriate post-polish processing, including a high-temperature anneal and sacrificial oxidation, (2) aligning the device sidewalls along the <100> direction, and (3) the presence of the pedestal structure. Base-emitter junction nonideality in these transistors has also been investigated.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	2343
Ending Page	2350
Page Count	8
File Size	853198
File Format	PDF
ISSN	00189383
Volume Number	41
Issue Number	12
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1994-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon Bipolar transistors Epitaxial growth Doping Leakage current Isolation technology Capacitance Fabrication Cutoff frequency Annealing
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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