NDLI: A physical model of floating body thin film silicon-on-insulator nMOSFET with parasitic bipolar transistor

Content Provider	IEEE Xplore Digital Library
Author	Hyun-Kyu Yu Jong-Son Lyu Sang-Won Kang Choong-Ki Kim
Copyright Year	1963
Abstract	An analytical model for SOI nMOSFET with a floating body is developed to describe the I/sub ds/-V/sub ds/ characteristics. Considering all current components in MOSFET as well as parasitic BJT, this study evaluates body potential, investigates the correlations among many device parameters, and characterizes the various phenomena in floating body: threshold voltage reduction, kink effect, output conductance increment, and breakdown voltage reduction. This study also provides a good physical insight on the role of the parasitic current components in the overall device operation. Our model explains the dependence of the channel length on the I/sub ds/-V/sub ds/ characteristics with parasitic BJT current gain. Results obtained from this model are in good agreement with the experimental I/sub ds/-V/sub ds/ curves for various bias and geometry conditions.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	726
Ending Page	733
Page Count	8
File Size	726943
File Format	PDF
ISSN	00189383
Volume Number	41
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1994-05-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Semiconductor thin films Silicon on insulator technology MOSFET circuits Threshold voltage Geometry Equations Semiconductor films Analytical models Intrusion detection Impact ionization
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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