NDLI: Trap studies in GaInP/GaAs and AlGaAs/GaAs HEMT's by means of low-frequency noise and transconductance dispersion characterizations

Content Provider	IEEE Xplore Digital Library
Author	Yi-Jen Chan Pavlidis, D.
Copyright Year	1963
Abstract	The presence of traps in GaInP/GaAs and AlGaAs/GaAs HEMT's was investigated by means of low frequency noise and frequency dispersion measurements. Low frequency noise measurements showed two deep traps (E/sub a1/=0.58 eV, E/sub a2/=0.27 eV) in AlGaAs/GaAs HEMT's. One of them (E/sub a2/) is responsible for the channel current collapse at low temperature. A deep trap (E/sub a1/'=0.52 eV) was observed in GaInP/GaAs HEMT's only at a much higher temperature (/spl sim/350 K). These devices showed a transconductance dispersion of /spl sim/16% at 300 K which reduced to only /spl sim/2% at 200 K. The dispersion characteristics of AlGaAs/GaAs HEMT's were very similar at 300 K (/spl sim/12%) but degraded at 200 K (/spl sim/20%). The low frequency noise and the transconductance dispersion are enhanced at certain temperatures corresponding to trap level crossing by the Fermi-level. The transition frequency of 1/f noise is estimated at 180 MHz for GaInP/GaAs HEMT's and resembles that of AlGaAs/GaAs devices.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	637
Ending Page	642
Page Count	6
File Size	641725
File Format	PDF
ISSN	00189383
Volume Number	41
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1994-05-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide HEMTs Low-frequency noise Temperature Transconductance Frequency estimation Dispersion Frequency measurement Noise measurement Degradation
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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