NDLI: Total dose-induced charge buildup in nitrided-oxide MOS devices

Content Provider	IEEE Xplore Digital Library
Author	Krantz, R.J. Scarpulla, J. Cable, J.S.
Copyright Year	1963
Abstract	Nitrided oxides and reoxidized nitrided oxides processed at various nitridation temperatures for various nitridation times have been irradiated. The total dose response of these nitrided oxides has been analyzed and compared to that of radiation-hard control oxides. To aid in the analysis, the charge-trapping model of R.J. Krantz et al. (1987) has been extended to include electron trapping and qualitatively applied to simulate the experimental results. Nitridation temperature was found to have a significant effect on the radiation response of thin ( approximately 150 AA) nitrided oxides and reoxidized nitrided oxides. The data show that oxides nitrided at 1050 degrees C and reoxidized accumulate less fixed charge (by a factor of approximately 2) than the control oxides. Oxides nitrided at 950 degrees C and reoxidized accumulate substantially more fixed charge (by a factor of approximately 5) than the controls or any of the nitrided samples. The analysis indicates that nitridation creates neutral hole traps as well as neutral electron traps, and that reoxidation can decrease the concentration of hole and electron traps.<>
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	1746
Ending Page	1753
Page Count	8
File Size	759884
File Format	PDF
ISSN	00189499
Volume Number	38
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1991-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOS devices Electron traps Temperature Aerospace engineering Silicon compounds Dielectric materials Materials reliability Testing Charge carrier processes Semiconductor process modeling
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Applied Field and Total Dose Dependence of Trapped Charge Buildup in MOS Devices

Electron trapping during irradiation in reoxidized nitrided oxide

Total Dose Response of Ge MOS Capacitors With HfO$_{2}$/Dy $_{2}$O$_{3}$ Gate Stacks

Total Dose-induced Charge Buildup In Nitrided-oxide MOS Devices

Interface-state generation under radiation and high-field stressing in reoxidized nitrided oxide MOS capacitors

Effects of Bias on the Irradiation and Annealing Responses of 4H-SiC MOS Devices

Total Dose and Bias Temperature Stress Effects for HfSiON on Si MOS Capacitors

Identification of the atomic scale defects involved in radiation damage in HfO/sub 2/ based MOS devices

Differences Between Charge Trapping States in Irradiated Nano-Crystalline HfO$_{2}$ and Non-Crystalline Hf Silicates

Total dose-induced charge buildup in nitrided-oxide MOS devices

Similar Documents

Applied Field and Total Dose Dependence of Trapped Charge Buildup in MOS Devices

Electron trapping during irradiation in reoxidized nitrided oxide

Total Dose Response of Ge MOS Capacitors With HfO$_{2}$/Dy $_{2}$O$_{3}$ Gate Stacks

Total Dose-induced Charge Buildup In Nitrided-oxide MOS Devices

Interface-state generation under radiation and high-field stressing in reoxidized nitrided oxide MOS capacitors

Effects of Bias on the Irradiation and Annealing Responses of 4H-SiC MOS Devices

Total Dose and Bias Temperature Stress Effects for HfSiON on Si MOS Capacitors

Identification of the atomic scale defects involved in radiation damage in HfO/sub 2/ based MOS devices

Differences Between Charge Trapping States in Irradiated Nano-Crystalline HfO$_{2}$ and Non-Crystalline Hf Silicates

Total dose-induced charge buildup in nitrided-oxide MOS devices