NDLI: Effects of ionizing radiation on the noise properties of DMOS power transistors

Content Provider	IEEE Xplore Digital Library
Author	Babcock, J.A. Titus, J.L. Schrimpf, R.D. Galloway, K.F.
Copyright Year	1963
Abstract	The 1/f noise properties of DMOS (double-diffused MOS) power transistors were examined as a function of total ionizing dose. The results indicate that radiation causes significant changes in the frequency dependence of the noise of the power MOSFETs studied. Before exposure to radiation, the noise power spectral density indicated a 1/f/sup lambda / relationship where lambda ranged from approximately 0.5 to 1.0. As the total dose level increased. lambda approached unity, while the magnitude of the noise increased proportionally with the radiation-induced charge density. In addition, noise measurements were performed after irradiation, while the devices were annealing under a +or-12 V bias. It was found that, under the +12 V bias, lambda increased and under the -12 V bias, lambda decreased. Finally, no correlation was found between the pre-irradiation 1/f noise magnitude and the radiation hardness of these DMOS power transistors.<>
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	1304
Ending Page	1309
Page Count	6
File Size	493958
File Format	PDF
ISSN	00189499
Volume Number	38
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1991-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Ionizing radiation Power transistors MOSFETs Semiconductor device noise Low-frequency noise Weapons Noise measurement Annealing Working environment noise Degradation
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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