NDLI: Random telegraph signals in small MOSFETs after X-ray irradiation

Content Provider	IEEE Xplore Digital Library
Author	Muto, H. Tsai, M.-H. Ma, T.-P.
Copyright Year	1963
Abstract	The random telegraph signals (RTSs) in small MOSFETs before and after X-ray irradiation and after annealing have been studied. It is believed that the RTSs arise from the trapping/detrapping of individual defect(s) near the SiO/sub 2//Si interface. The key results from this study are: (1) RTSs existed prior to X-ray irradiation in both weak inversion and strong inversion due to process-induced defects, (2) X-ray irradiation causes the disappearance of the original RTS and the appearance of new RTS with different emission time constants, (3) X-ray irradiation also causes high frequency current fluctuations with much more irregular amplitude distribution than the slower RTSs, (4) annealing at 200-300 degrees C in nitrogen removes most of the high frequency component and reveals more clearly some of the radiation-induced RTSs, and (5) annealing at 400 degrees C essentially removes all of the radiation-induced RTSs, but causes the reappearance of one set of the original RTS traces in strong inversion.<>
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	1116
Ending Page	1123
Page Count	8
File Size	688852
File Format	PDF
ISSN	00189499
Volume Number	38
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1991-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Telegraphy MOSFETs Annealing Fluctuations Voltage Frequency Microscopy Electron emission Electron traps Microelectronics
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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