NDLI: Interface-state generation under radiation and high-field stressing in reoxidized nitrided oxide MOS capacitors

Content Provider	IEEE Xplore Digital Library
Author	Bhat, N. Vasi, J.
Copyright Year	1963
Abstract	The time evolution of interface-state (D/sub it/) buildup following radiation and high-field stressing in MOS capacitors was compared for 45-nm-thick conventional 'dry' oxide (SiO/sub 2/) and reoxidized nitrided oxide (RNO). While the oxide shows the expected postirradiation increase of D/sub it/ with time under positive bias, the RNO shows no time-dependent buildup. This indicates that hydrogen transport, widely held responsible for the slow evolution of D/sub it/ after radiation, does not play a role in D/sub it/ generation in RNO. It is suggested that this is due to a blocking effect of the nitrogen-rich oxynitride layer which is known to exist in RNO near the silicon/silicon-dioxide interface, and which inhibits the drift of hydrogen ions to the interface. Exposure of the capacitors to a hydrogen ambient after irradiation confirms that for RNO, unlike the case of oxide, there is no increase of D/sub it/ due to hydrogen effects. Postirradiation electron injection in RNO suggests that trapped-hole recombination may be responsible for the small D/sub it/ generation seen in RNO.<>
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	2230
Ending Page	2235
Page Count	6
File Size	513736
File Format	PDF
ISSN	00189499
Volume Number	39
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1992-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Hydrogen Electron traps Interface states Nitrogen MOS capacitors Spontaneous emission Silicon MOS devices Government Charge carrier processes
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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